REACTION-TIME TO VOLTAGE PULSES APPLIED TO SEMICONDUCTOR IMPACT IONIZATION BREAKDOWN

被引:0
|
作者
KITTEL, A
RAU, U
HIRSCH, M
RICHTER, R
HUEBENER, RP
PEINKE, J
PARISI, J
机构
[1] UNIV BAYREUTH,INST PHYS,BOX 101251,W-8580 BAYREUTH,GERMANY
[2] UNIV TUBINGEN,INST PHYS,W-7400 TUBINGEN 1,GERMANY
[3] CRTBT,CNRS,GRENOBLE,FRANCE
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electric avalanche breakdown in semiconductors exhibits many features of a phase transition. In this paper, we introduce time-resolved measurements performed during the transition from a low to a high conducting state as reaction to a sudden change of the control parameter (i.e., the voltage bias).
引用
收藏
页码:639 / 640
页数:2
相关论文
共 50 条
  • [21] THE IMPACT OF AFFECTIVE AROUSAL AND INDIVIDUAL-DIFFERENCES ON HEART-RATE AND REACTION-TIME
    WITVLIET, CV
    PANAYIOTOU, G
    VRANA, SR
    PSYCHOPHYSIOLOGY, 1995, 32 : S80 - S80
  • [22] SIMPLIFIED DERIVATION OF REACTION-TIME HISTORY IN AIRCRAFT IMPACT ON A NUCLEAR-POWER PLANT
    BAHAR, LY
    RICE, JS
    NUCLEAR ENGINEERING AND DESIGN, 1978, 49 (03) : 263 - 268
  • [23] TIME-RESOLVED IMPACT IONIZATION IN ZNSE HIGH-VOLTAGE SWITCHES
    ELEZZABI, AY
    HOUTMAN, H
    MEYER, J
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1994, 22 (06) : 1043 - 1048
  • [24] Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions
    V. I. Brylevskiy
    I. A. Smirnova
    N. I. Podolska
    Yu. A. Zharova
    P. B. Rodin
    I. V. Grekhov
    Technical Physics Letters, 2018, 44 : 160 - 163
  • [25] A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration
    Aristov, Yu. V.
    Voronkov, V. B.
    Grekhov, I. V.
    Kozlov, A. K.
    Korotkov, S. V.
    Lyublinskii, A. G.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2007, 50 (02) : 224 - 227
  • [26] A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration
    Yu. V. Aristov
    V. B. Voronkov
    I. V. Grekhov
    A. K. Kozlov
    S. V. Korotkov
    A. G. Lyublinskii
    Instruments and Experimental Techniques, 2007, 50 : 224 - 227
  • [27] Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage
    Huang, Qianqian
    Huang, Ru
    Wang, Zhenhua
    Zhan, Zhan
    Wang, Yangyuan
    APPLIED PHYSICS LETTERS, 2011, 99 (08)
  • [28] Breakdown voltage reduction analysis with adopting dual channel vertical strained sige impact ionization mosfet (VESIMOS)
    Saad, Ismail
    Bun Seng, C.
    Mohd Zuhir, H.
    Nurmin, B.
    Khairul, A.M.
    Ghosh, Bablu
    Ismail, Razali
    Hashim, U.
    International Journal of Simulation: Systems, Science and Technology, 2014, 15 (02): : 40 - 45
  • [29] Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p-n Junctions
    Brylevskiy, V. I.
    Smirnova, I. A.
    Podolska, N. I.
    Zharova, Yu. A.
    Rodin, P. B.
    Grekhov, I. V.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (02) : 160 - 163
  • [30] The Estimation of the Dielectric Strength Decrease of the Solid-solid Interfaces by using the Applied Voltage to Breakdown Time Characteristics
    Shin, Cheol Gi
    Bae, Duck Kweon
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2007, 8 (06) : 278 - 282