REACTION-TIME TO VOLTAGE PULSES APPLIED TO SEMICONDUCTOR IMPACT IONIZATION BREAKDOWN

被引：0

作者：

KITTEL, A

RAU, U

HIRSCH, M

RICHTER, R

HUEBENER, RP

PEINKE, J

PARISI, J

机构：

[1] UNIV BAYREUTH,INST PHYS,BOX 101251,W-8580 BAYREUTH,GERMANY

[2] UNIV TUBINGEN,INST PHYS,W-7400 TUBINGEN 1,GERMANY

[3] CRTBT,CNRS,GRENOBLE,FRANCE

来源：

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES | 1993年 / 48卷 / 5-6期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electric avalanche breakdown in semiconductors exhibits many features of a phase transition. In this paper, we introduce time-resolved measurements performed during the transition from a low to a high conducting state as reaction to a sudden change of the control parameter (i.e., the voltage bias).

引用

页码：639 / 640

页数：2

共 50 条

[1] ON THE ROLE OF DOPING CONCENTRATION IN SEMICONDUCTOR IMPACT IONIZATION BREAKDOWN
PARISI, J
PHILOSOPHICAL MAGAZINE LETTERS, 1991, 64 (06) : 357 - 360
[2] Effect of Device Parameters on the Breakdown Voltage of Impact-Ionization Metal-Oxide-Semiconductor Devices
Choi, Woo Young
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[3] BREAKDOWN VOLTAGE AND TIME-TO-BREAKDOWN AS INFLUENCED BY THE STEEPNESS OF THE APPLIED POSITIVE IMPULSE
ABDELSALAM, M
TURKY, AEHA
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1988, 24 (06) : 1031 - 1037
[4] AN EMPIRICAL-EVALUATION OF ROBUST REGRESSION APPLIED TO REACTION-TIME DATA
STERNBERG, S
TUROCK, DL
KNOLL, RL
BULLETIN OF THE PSYCHONOMIC SOCIETY, 1987, 25 (05) : 346 - 346
[5] REACTION-TIME TO TASTE STIMULI APPLIED TO ONE SIDE OF THE HUMAN TONGUE
YAMAMOTO, T
MATSUO, R
KAWAMURA, Y
CHEMICAL SENSES, 1985, 10 (01) : 141 - 142
[6] TEMPORAL SUMMATION AND REACTION-TIME TO DOUBLE-LIGHT PULSES AT SUPRATHRESHOLD LEVELS
UENO, T
PERCEPTION & PSYCHOPHYSICS, 1976, 19 (05): : 399 - 404
[7] CURRENT FLUCTUATIONS IN A SEMICONDUCTOR ( DIELECTRIC ) UNDER CONDITIONS OF IMPACT IONIZATION AND AVALANCHE BREAKDOWN
TAGER, AS
SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 1919 - +
[8] Impact of Plasma Seeding on the Propagation of Ionization Waves Launched by Fast Voltage Pulses
Barnat, E. V.
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 39 (11) : 2608 - 2609
[9] Optimization of Impact Ionization in Metal-Oxide-Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance
Chen, Yanning
Song, Yixian
Wu, Bo
Liu, Fang
Deng, Yongfeng
Kang, Pingrui
Huang, Xiaoyun
Wu, Yongyu
Gao, Dawei
Xu, Kai
ELECTRONICS, 2024, 13 (20)
[10] Dependence of the number of successive current pulses enabling breakdown in gas-filled diodes on the applied voltage
Zlatic, VZ
Bosan, DA
Radovic, MK
Jovanovic, TV
Milosavljevic, CS
18TH SPIG - 18TH SUMMER SCHOOL AND INTERNATIONAL SYMPOSIUM ON THE PHYSICS OF IONIZED GASES: CONTRIBUTED PAPERS & ABSTRACTS OF INVITED LECTURES AND PROGRESS REPORTS, 1996, : 352 - 355

← 1 2 3 4 5 →