ANALYSIS OF HYDROGEN CONTENT IN PLASMA SILICON-NITRIDE FILM

被引：23

作者：

YOSHIMI, T

SAKAI, H

TANAKA, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

10.1149/1.2130015

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1853 / 1854

页数：2

共 9 条

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[8] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].

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[9]

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