REDUCED SILICON MOVEMENT IN GAINAS/ALINAS HEMT STRUCTURES WITH LOW-TEMPERATURE ALINAS SPACERS

被引:0
|
作者
BROWN, AS
NGUYEN, LD
METZGER, RA
MATLOUBIAN, M
SCHMITZ, AE
LUI, M
WILSON, RG
HENIGE, JA
机构
来源
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:281 / 286
页数:6
相关论文
共 50 条
  • [21] MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
    Biermann, K
    Künzel, H
    Elsässer, T
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 35 - 38
  • [22] RAPID THERMAL ANNEALING CHARACTERISTICS OF BULK ALINAS/INP AND ALINAS/GAINAS/INP HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES WITH PLANAR SILICON DOPING
    KIZILOGLU, K
    HASHEMI, MM
    YIN, LW
    LI, YJ
    PETROFF, PM
    MISHRA, UK
    BROWN, AS
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3798 - 3802
  • [23] DOUBLE MODULATION-DOPED STRAINED-CHANNEL ALINAS-GAINAS-ALINAS HEMT STRUCTURES OPERATING AT HIGH DRAIN CURRENT DENSITIES AND MILLIMETER-WAVE FREQUENCIES
    GUEISSAZ, F
    ENOKI, T
    ISHII, Y
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 : 29 - 34
  • [24] EFFECT OF SI MOVEMENT ON THE ELECTRICAL-PROPERTIES OF INVERTED ALINAS-GAINAS MODULATION DOPED STRUCTURES
    BROWN, AS
    METZGER, RA
    HENIGE, JA
    NGUYEN, L
    LUI, M
    WILSON, RG
    APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3610 - 3612
  • [25] 155-GHZ AND 213-GHZ ALINAS/GAINAS/INP HEMT MMIC OSCILLATORS
    ROSENBAUM, SE
    KORMANYOS, BK
    JELLOIAN, LM
    MATLOUBIAN, M
    BROWN, AS
    LARSON, LE
    NGUYEN, LD
    THOMPSON, MA
    KATEHI, LPB
    REBEIZ, GM
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (04) : 927 - 932
  • [26] HIGH-GAIN ALINAS/GAINAS/INP HEMT WITH INDIVIDUALLY GROUNDED SOURCE FINGER VIAS
    HUR, KY
    MCTAGGART, RA
    VENTRESCA, MP
    WOHLERT, R
    AUCOIN, LM
    KAZIOR, TE
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (09) : 390 - 392
  • [27] TEMPERATURE-DEPENDENCE OF DC AND RF CHARACTERISTICS OF ALINAS/GAINAS HBTS
    HAFIZI, M
    STANCHINA, WE
    METZGER, RA
    MACDONALD, PA
    WILLIAMS, F
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) : 1583 - 1588
  • [28] Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates
    Wakita, AS
    Rohdin, H
    Robbins, VM
    Moll, N
    Su, CY
    Nagy, A
    Basile, DP
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 223 - 226
  • [29] Growth of AlInAs using low-oxygen-content metalorganic precursors and application to HEMT structures
    Tanaka, T
    Tokudome, K
    Miyamoto, Y
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 393 - 396
  • [30] Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer.
    Medjdoub, F
    Theron, D
    Dessenne, F
    Fauquembergue, R
    De Jaeger, JC
    EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2002, : 57 - 62