共 50 条
- [1] AlInAs/GaInAs HEMT with AlInP barrier layer 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 678 - 680
- [4] LOW-TEMPERATURE BUFFER ALINAS/GAINAS ON INP HEMT TECHNOLOGY FOR ULTRA-HIGH-SPEED INTEGRATED-CIRCUITS GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 143 - 146
- [5] Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 308 - 311
- [9] Reliability improvement of AlInAs/GaInAs HEMT by fluorine incorporation control PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 110 - 117
- [10] CONTROL OF BERYLLIUM DIFFUSION IN ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS THROUGH USE OF LOW-TEMPERATURE GAINAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 859 - 862