MAGNETIC-FIELD-INDUCED LOCALIZATION IN PB1-XSNXTE(IN)

被引：3
|
作者：
KHOKHLOV, DR
IVANCHIK, II
DEVISSER, A
NIKORICH, AV
机构：
[1] UNIV AMSTERDAM,VAN DER WAALS ZEEMAN LAB,1018 XE AMSTERDAM,NETHERLANDS
[2] MOLDAVIAN ACAD SCI,INST APPL PHYS,KISHINEV,MOLDOVA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期
关键词：
D O I：
10.1088/0268-1242/8/1S/079
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the high-field (H < 400 kOe) magnetoresistance of initially dielectric Pb0.75Sn0.25Te(In). The data taken at 1.4-4.2 K show an increase in magnetoresistance with time (localization) for a relatively low concentration of non-equilibrium electrons n. The characteristic time for localization tau depends exponentially on H and linearly on T. The possible origins of the effect are discussed.
引用
收藏
页码：S352 / S355
页数：4
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