ELECTRICAL AND OPTICAL-PROPERTIES OF SILICON DOPED INP GROWN BY GAS SOURCE MBE

被引：7

作者：

MORISHITA, Y ^{[1
]}

IMAIZUMI, M ^{[1
]}

GOTODA, M ^{[1
]}

MARUNO, S ^{[1
]}

NOMURA, Y ^{[1
]}

OGATA, H ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES CORP,AMAGASAKI 661,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期

关键词：

D O I：

10.1016/0022-0248(90)90147-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed investigation was carried out on the characteristics of Si-doped InP grown by gas source MBE (GSMBE) using trimethylindium, phosphine and solid Si source. It has been found that the InP epitaxial layers grown by GSMBE have excellent qualities comparable to those grown by other epitaxial techniques. Good agreement was obtained between the Si equilibrium vapor pressure curve and the temperature dependence of the carrier concentration in the range from 6X1015 to 6X1018 cm-3. The Burstein-Moss shift was observed in the photoluminescence spectra. © 1990.

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页码：457 / 462

页数：6

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