共 50 条
- [31] ELECTRONIC-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY LOW-ENERGY ION-BEAM BOMBARDMENT APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (06): : 643 - 644
- [32] DUAL ION-BEAM DEPOSITION OF OXIDE, NITRIDE, AND CARBIDE FILMS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1963 - 1966
- [35] THE PITTING BEHAVIOR OF SILICON-NITRIDE ION-BEAM ASSISTED DEPOSITED COATINGS ON ALUMINUM SURFACE & COATINGS TECHNOLOGY, 1992, 51 (1-3): : 30 - 34
- [36] DIFFUSION INHIBITION AGAINST GOLD OF ION-BEAM SYNTHESIZED BURIED SILICON-NITRIDE LAYERS IN SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 34 (04): : 523 - 524
- [37] ANNEALING EFFECT ON MECHANICAL-STRESS IN REACTIVE ION-BEAM SPUTTER-DEPOSITED SILICON-NITRIDE FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1469 - 1474