共 50 条
- [31] ELECTRONIC-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY LOW-ENERGY ION-BEAM BOMBARDMENT APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (06): : 643 - 644
- [32] DUAL ION-BEAM DEPOSITION OF OXIDE, NITRIDE, AND CARBIDE FILMS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1963 - 1966
- [37] ANNEALING EFFECT ON MECHANICAL-STRESS IN REACTIVE ION-BEAM SPUTTER-DEPOSITED SILICON-NITRIDE FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1469 - 1474