CURRENT STATUS OF ION-IMPLANTATION FOR VLSI APPLICATIONS

被引：20

作者：

AKASAKA, Y

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90128-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：9 / 15

页数：7

共 50 条

[21] APPLICATIONS OF ION-IMPLANTATION IN METALS AND ALLOYS
DEARNALEY, G
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (07): : 789 - 790
[22] APPLICATIONS OF ION-IMPLANTATION TO METALLIC CORROSION
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BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1030 - 1031
[23] HIGH-CURRENT ION SOURCES FOR ION-IMPLANTATION
KELLER, R
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 518 - 521
[24] METALLURGICAL APPLICATIONS OF ION-IMPLANTATION AND ION-BOMBARDMENT
NELSON, RS
VACUUM, 1973, 23 (03) : 79 - 84
[25] A LASER ION-SOURCE FOR ION-IMPLANTATION APPLICATIONS
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AMES, F
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[26] ULTRAHIGH CURRENT-DENSITY ION-IMPLANTATION
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[27] HIGH-CURRENT PELLETRON FOR ION-IMPLANTATION
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[28] ION-IMPLANTATION DOPING OF INP FOR DEVICE APPLICATIONS
VAIDYANATHAN, KV
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C244 - C244
[29] ION-IMPLANTATION IN METALS - STRUCTURE INVESTIGATIONS AND APPLICATIONS
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RICHTER, E
VACUUM, 1988, 38 (11) : 967 - 971
[30] ION-IMPLANTATION INTO GAAS FOR MICROWAVE DEVICE APPLICATIONS
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1715 - 1717

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