CURRENT STATUS OF ION-IMPLANTATION FOR VLSI APPLICATIONS

被引：20

作者：

AKASAKA, Y

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90128-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：9 / 15

页数：7

共 50 条

[1] HYDROGENATION BY ION-IMPLANTATION FOR VLSI/SOI APPLICATIONS
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