MATERIAL AND DEVICE PROPERTIES OF 3 INCH DIAMETER GAAS-ON-SI WITH BURIED P-TYPE LAYERS

被引：0
|
作者：
PEARTON, SJ
LEE, KM
HAEGEL, NM
HUANG, CJ
NAKAHARA, S
REN, F
SCARPELLI, V
SHORT, KT
VERNON, SM
机构：
来源：
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS | 1989年 / 144卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：317 / 322
页数：6
相关论文
共 50 条
  • [21] Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates
    Imai, Yukihiro
    Takahashi, Kouta
    Uchida, Noriyuki
    Maeda, Tatsuro
    Nakatsuka, Osamu
    Zaima, Shigeaki
    Kurosawa, Masashi
    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 310 - 312
  • [22] Structural characterisation of US layers deposited on porous p-type GaAs
    Missaoui, Ali
    Beji, Lotfi
    Gaidi, Mounir
    Harrabi, Zina
    Ben Ouada, Hafedh
    Bouazizi, Abdelaziz
    MICROELECTRONICS JOURNAL, 2007, 38 (01) : 96 - 101
  • [23] Isolation of p-type carbon δ-doped layers in GaAs by ion bombardment
    Boudinov, H.
    Pesenti, G. C.
    Danilov, I.
    Zvonkov, B. N.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (01) : 132 - 136
  • [24] PROPERTIES OF P-TYPE GAAS PREPARAED BY COPPER DIFFUSION
    ROSI, FD
    MEYERHOFER, D
    JENSEN, RV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C65 - C65
  • [25] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION
    ROSI, FD
    MEYERHOFER, D
    JENSEN, RV
    JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108
  • [26] Thermoelectric properties of p-type SrTiO3/graphene layers nanohybrids
    Nath, Chandrani
    Chueh, C. -Y.
    Kuo, Y. -K.
    Singh, J. P.
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (18)
  • [27] Effect of Si or Al interface layers on the properties of Ta and Mo contacts to p-type SiC
    J. O. Olowolafe
    J. Liu
    R. B. Gregory
    Journal of Electronic Materials, 2000, 29 : 391 - 397
  • [28] Effect of Si or Al interface layers on the properties of Ta and Mo contacts to p-type SiC
    Olowolafe, JO
    Liu, J
    Gregory, RB
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 391 - 397
  • [29] A new partial SOI power device structure with P-type buried layer
    Duan, BX
    Zhang, B
    Li, ZJ
    SOLID-STATE ELECTRONICS, 2005, 49 (12) : 1965 - 1968
  • [30] Dynamic properties of radiative recombination in p-type δ-doped layers in GaAs -: art. no. 125337
    Zhao, QX
    Willander, M
    Bergman, JP
    Holtz, PO
    Lu, W
    Shen, SC
    PHYSICAL REVIEW B, 2001, 63 (12):
12345