AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET WITH A MODULATION-DOPED CHANNEL

被引：6
|
作者：
DELALAMO, JA [1 ]
MIZUTANI, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期
关键词：
D O I：
10.1109/55.31768
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：394 / 396
页数：3
相关论文
共 50 条
  • [31] Electron-phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
    Prasad, C
    Ferry, DK
    Vasileska, D
    Wieder, HH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2) : 215 - 220
  • [32] TIME-OF-FLIGHT MEASUREMENT OF ELECTRON VELOCITY IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE
    SHIGEKAWA, N
    FURUTA, T
    ARAI, K
    APPLIED PHYSICS LETTERS, 1990, 57 (01) : 67 - 69
  • [33] CHARACTERISTICS OF IN0.52AL0.48AS/IN0.53GA0.47AS/INP HEMTS WITH N-CHANNEL AND P-CHANNEL DOPING
    TIAN, H
    KIM, KW
    LITTLEJOHN, MA
    MISHRA, UK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2362 - 2365
  • [34] MBE生长In0.52Al0.48AS/In0.53Ga0.47AS/InP材料
    彭正夫
    张允强
    高翔
    孙娟
    吴鹏
    固体电子学研究与进展, 1993, (03) : 248 - 248
  • [35] OPTICAL INVESTIGATION OF MODULATION-DOPED IN0.53GA0.47AS/IN0.48AL0.52AS MULTIPLE QUANTUM WELL HETEROSTRUCTURES
    PENNA, AFS
    SHAH, J
    PINCZUK, A
    CHO, AY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 696 - 696
  • [36] Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, Vladimir A.
    Lunin, Roman A.
    Yuzeeva, Natalia A.
    Galiev, Galib B.
    Vasilievskii, Ivan S.
    Klimov, Eugene A.
    ADVANCES IN NANODEVICES AND NANOFABRICATION, 2012, : 273 - 282
  • [37] Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells
    T. Koga
    J. Nitta
    S. Marcet
    Journal of Superconductivity, 2003, 16 : 331 - 334
  • [38] Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, V. A.
    Lunin, R. A.
    Yuzeeva, N. A.
    Galiev, G. B.
    Vasilievskii, I. S.
    Klimov, E. A.
    ACTA PHYSICA POLONICA A, 2013, 123 (02) : 345 - 348
  • [39] SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES
    ITOH, T
    GRIEM, T
    WICKS, GW
    EASTMAN, LF
    ELECTRONICS LETTERS, 1985, 21 (09) : 373 - 374
  • [40] MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTODETECTOR PREPARED BY MOLECULAR-BEAM EPITAXY
    CHEN, CY
    PANG, YM
    CHO, AY
    ALAVI, K
    GARBINSKI, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 262 - 264
12345