THE VAPOR TRANSPORT MECHANISM DURING CRYSTALLIZATION OF HGI2 IN CLOSED AMPOULES

被引：6
|
作者：
CONDER, K
LASKOWSKI, J
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1989年 / 283卷 / 02期
关键词：
D O I：
10.1016/0168-9002(89)91349-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：138 / 143
页数：6
相关论文
共 50 条
  • [21] ALPHA-HGI2 PLATELETS CRYSTALLIZATION FROM VAPOR
    LASKOWSKI, J
    PRZYLUSKI, J
    CONDER, K
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (10-11) : 1231 - 1237
  • [22] STUDY OF THE CRYSTALLINE GROWTH OF HGI2 (ALPHA) USING THE VAPOR-PHASE AND IN A SEALED TUBE
    OMALY, J
    ROBERT, M
    CADORET, R
    MATERIALS RESEARCH BULLETIN, 1981, 16 (10) : 1261 - 1270
  • [23] MASS-TRANSPORT, NUCLEATION AND MONOCRYSTAL GROWTH OF HGI2 WITH THE FORCED FLUX METHOD
    OMALY, J
    ROBERT, M
    BRISSON, P
    CADORET, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 213 (01): : 19 - 26
  • [24] Near single-crystal electrical properties of polycrystalline HgI2 produced by physical vapor deposition
    Zuck, A
    Schieber, M
    Khakhan, O
    Burshtein, Z
    2002 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-3, 2003, : 505 - 509
  • [25] THERMAL-RADIATION AND LOW-TEMPERATURE-VAPOR GROWTH OF HGI2 CRYSTAL IN PRODUCTION FURNACE
    ROUX, A
    FEDOSEYEV, A
    ROUX, B
    JOURNAL OF CRYSTAL GROWTH, 1993, 130 (3-4) : 523 - 532
  • [26] TEMPERATURE-DEPENDENCE OF EXTINCTION COEFFICIENT OF MERCURIC IODIDE VAPOR - HEAT OF SUBLIMATION AND VAPOR-PRESSURE OF SOLID HGI2
    ABRAHAM, BM
    JEANNOTTE, A
    INORGANIC CHEMISTRY, 1977, 16 (09) : 2270 - 2272
  • [27] Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition
    Yang, Weiguang
    Nie, Lei
    Li, Dongmei
    Wang, Yali
    Zhou, Jie
    Ma, Lei
    Wang, Zhenhua
    Shi, Weimin
    JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 149 - 153
  • [28] Characterization of (001)-orientated polycrystalline α-HgI2 filMS grown by hot wall physical vapor deposition
    Zheng, Yaoming
    Shi, Weimin
    Wei, Guangpu
    Qin, Juan
    Chen, Sheng
    Wang, Linjun
    Xia, Yiben
    THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
  • [29] Near single-crystal electrical properties of polycrystalline HgI2 produced by physical vapor deposition
    Zuck, A
    Schieber, A
    Khakhan, O
    Burshtein, Z
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (04) : 991 - 997
  • [30] I(T), I(V) AND SURFACE EFFECT STUDIES OF VAPOR GROWN AND SOLUTION GROWN HGI2 DETECTORS
    MELLET, J
    FRIANT, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02) : 199 - 207
12345