INFLUENCE OF THE EXCHANGE INTERACTION ON THE ESR LINEWIDTH IN AMORPHOUS SILICON

被引：32

作者：

BACHUS, R

MOVAGHAR, B

SCHWEITZER, L

VOGETGROTE, U

机构：

[1] Fachbereich Physik der Universität Marburg, Marburg, D 3550

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 01期

关键词：

D O I：

10.1080/13642817908245348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetic-field dependence of the E.S.R. linewidth in amorphous silicon has been measured in order to investigate the influence of the exchange interaction on the E.S.R. linewidth. A different field dependence was obtained for amorphous silicon prepared by the glow-discharge technique and by electron-beam evaporation. The experimental results are discussed in terms of exchange-coupled spins which are distributed either homogeneously or inhomogeneously. It is concluded that exchange interaction is necessary to account for a variety of experimental results obtained in these materials. © 1979 Taylor & Francis Group, LLC.

引用

页码：27 / 37

页数：11

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