GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD

被引：45

作者：

BENZ, KW ^{[1
]}

MULLER, G ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 01期

关键词：

D O I：

10.1016/0022-0248(79)90105-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaSb and InSb single crystals up to a length of 30 mm were grown by the Travelling Heater Method (THM) using a vertical system as well as a horizontal one. The maximum growth rate of inclusion-free 10 mm diameter crystals (GaSb: T = 500°C and InSb: T = 400°C) was 2.5 ± 0.5 mm/day. The influence of various growth parameters on the crystal quality was studied. © 1979.

引用

页码：35 / 42

页数：8

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