ENTIRELY DIFFUSED VERTICAL CHANNEL JFET - THEORY AND EXPERIMENT

被引：20

作者：

MORENZA, JL ^{[1
]}

ESTEVE, D ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,7 AVE COLONEL ROCHE,F-31400 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 05期

关键词：

D O I：

10.1016/0038-1101(78)90006-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：739 / 746

页数：8

共 50 条

[21] Visualization Experiment of Bubble Coalescence in a Narrow Vertical Rectangular Channel [J].

Ren, Tingting ;

Zhu, Zhiqiang ;

Zhang, Rui ;

Shi, Jiangwu ;

Yan, Changqi .

FRONTIERS IN ENERGY RESEARCH, 2020, 8

[22] A Review of Superjunction Vertical Diffused MOSFET [J].

Chen, Jian ;

Sun, Weifeng ;

Zhang, Long ;

Zhu, Jing ;

Lin, Yanzhang .

IETE TECHNICAL REVIEW, 2012, 29 (01) :44-52

[23] A Vertical SiC JFET with a Monolithically Integrated JBS Diode [J].

Sheng, K. ;

Radhakrishnan, R. ;

Zhang, Y. ;

Zhao, J. H. .

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :255-258

[24] Parameter Extraction Procedure for Vertical SiC Power JFET [J].

Grekov, Alexander E. ;

Chen, Zhiyang ;

Fu, Ruiyun ;

Hudgins, Jerry L. ;

Mantooth, H. Alan ;

Sheridan, David C. ;

Casady, Jeff ;

Santi, Enrico .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2011, 47 (04) :1862-1871

[25] Silicon Carbide Vertical JFET Operating at High Temperature [J].

Vassilevski, Konstantin ;

Hilton, Keith P. ;

Wright, Nicholas ;

Uren, Michael ;

Munday, Alison ;

Nikitina, Irina ;

Hydes, Alan ;

Horsfall, Alton ;

Johnson, C. Mark .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1063-+

[26] Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors [J].

Kim, JG ;

Ihn, B ;

Kim, B ;

Lee, KG ;

Lee, W ;

Lee, SW .

SOLID-STATE ELECTRONICS, 1996, 39 (04) :541-546

[27] BEHAVIOR OF A CONVERGING-CHANNEL BREAKWATER - THEORY AND EXPERIMENT [J].

PULLIN, DI ;

JOUBERT, PN .

JOURNAL OF FLUID MECHANICS, 1984, 141 (APR) :123-138

[28] Patterned electrode vertical field effect transistor: Theory and experiment [J].

Ben-Sasson, Ariel J. ;

Tessler, Nir .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)

[29] MODE ENHANCEMENT USING A VERTICAL ARRAY OF TRANSMITTERS - THEORY AND EXPERIMENT [J].

KANABIS, WG .

JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1975, 58 :S30-S30

[30] A VISUAL EXPERIMENT OF SINGLE BUBBLE GROWTH PROCESSES IN A VERTICAL RECTANGULAR CHANNEL [J].

Cheng, Ning ;

Guo, Yun ;

Peng, Changhong .

PROCEEDINGS OF THE 26TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2018, VOL 6A, 2018,

← 1 2 3 4 5 →