ANALYSIS OF DEEP DEPLETION MOSFET AND USE OF DC CHARACTERISTICS FOR DETERMINING BULK-CHANNEL CHARGE-COUPLED DEVICE PARAMETERS

被引：30
作者：
HAKEN, RA
机构：
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 05期
关键词：
D O I：
10.1016/0038-1101(78)90008-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：753 / 761
页数：9
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