NIAL/N-GAAS SCHOTTKY DIODES - BARRIER HEIGHT ENHANCEMENT BY HIGH-TEMPERATURE ANNEALING

被引：49
|
作者：
SANDS, T
CHAN, WK
CHANG, CC
CHASE, EW
KERAMIDAS, VG
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 16期
关键词：
D O I：
10.1063/1.99152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1338 / 1340
页数：3
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