NIAL/N-GAAS SCHOTTKY DIODES - BARRIER HEIGHT ENHANCEMENT BY HIGH-TEMPERATURE ANNEALING

被引：49

作者：

SANDS, T

CHAN, WK

CHANG, CC

CHASE, EW

KERAMIDAS, VG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 16期

关键词：

D O I：

10.1063/1.99152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1338 / 1340

页数：3

共 9 条

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[6] A COMPARATIVE-STUDY OF PHASE-STABILITY AND FILM MORPHOLOGY IN THIN-FILM CO/GAAS,RH/GAAS,IR/GAAS,NI/GAAS,PD/GAAS, AND PT/GAAS SYSTEMS [J].

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[7]

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[9] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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