FORMATION AND ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL SRTIO3/SRVO3-X/SI(100) STRUCTURES

被引：18

作者：

MOON, BK

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

CV CHARACTERISTIC; EPITAXY; FILM GROWTH; IV CHARACTERISTIC; MORPHOLOGY; MULTILAYERS; SILICON; SIMS; STRONTIUM COMPOUNDS; TITANATES; VANADATES; XRD;

D O I：

10.1063/1.114765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial growth of dielectric SrTiO3(STO)/conductive SrVO3-x(SVO)/Si(100) structures was realized using a focused electron beam evaporation method. It was found from x-ray diffraction analysis and pole figure measurement that the epitaxial relationships were (100)(STO) parallel to(100)(SVO)\\(100)(Si) and [011](STO)parallel to[011](SVO)parallel to[001](Si). It was also observed from depth profiling by secondary ion mass spectrometry that the interdiffusion of constituent elements among the films and Si substrate was not significant, Electrical properties of the STO film were characterized through I-V (current-voltage) and C-V (capacitance-voltage) measurements, after depositing Al electrodes on the STO/SVO/Si structure. The best values of breakdown field, resistivity, and dielectric constant were 345 kV/cm, 6.4 X 10(12) Omega cm, and 243, respectively. (C) 1995 American Institute of Physics.

引用

页码：1996 / 1998

页数：3

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