COMPUTATIONALLY EFFICIENT AND ACCURATE CAPACITANCE MODEL FOR THE GAAS-MESFET FOR MICROWAVE NONLINEAR CIRCUIT-DESIGN

被引：0
|
作者：
TELLEZ, JR [1 ]
MEZHER, K [1 ]
ALDAAS, M [1 ]
机构：
[1] UNIV BRADFORD,DEPT ELECTR & ELECT ENGN,BRADFORD BD7 1DP,W YORKSHIRE,ENGLAND
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1994年 / 13卷 / 12期
关键词：
D O I：
10.1109/43.331406
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existing techniques. The new empirical relation is applied successfully to a wide range of silicon and GaAs devices.
引用
收藏
页码：1489 / 1497
页数：9
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