FLOW MODULATION EPITAXY OF GAXIN(1-X)AS/ALAS HETEROSTRUCTURES ON INP FOR RESONANT-TUNNELING DIODES

被引：0

作者：

KELLER, BP ^{[1
]}

YEN, JC ^{[1
]}

HOLMES, AL ^{[1
]}

DENBAARS, SP ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0169-4332(94)90207-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown GaxIn1-xAs and GaxIn1-xAs/AlAs heterostructures by flow modulation epitaxy (FME) for the first time. GaxIn1-xAs on InP growth was investigated in the temperature range between 450 and 650-degrees-C. Photoluminescence and electrical characterization revealed that high quality of the FME grown GaxIn1-xAs layers can be achieved. Resonant tunneling diodes (RTD) were fabricated from FME-grown GaxIn1-xAs/AlAs double barrier structures. The best room temperature peak-to-valley ratio of 4.3 demonstrates that this technique provides heterointerfaces of decice quality. Good lateral homogeneity ove the wafer was also achieved.

引用

页码：126 / 131

页数：6

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