FLOW MODULATION EPITAXY OF GAXIN(1-X)AS/ALAS HETEROSTRUCTURES ON INP FOR RESONANT-TUNNELING DIODES

被引：0
|
作者：
KELLER, BP [1 ]
YEN, JC [1 ]
HOLMES, AL [1 ]
DENBAARS, SP [1 ]
MISHRA, UK [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
APPLIED SURFACE SCIENCE | 1994年 / 82-3卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0169-4332(94)90207-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have grown GaxIn1-xAs and GaxIn1-xAs/AlAs heterostructures by flow modulation epitaxy (FME) for the first time. GaxIn1-xAs on InP growth was investigated in the temperature range between 450 and 650-degrees-C. Photoluminescence and electrical characterization revealed that high quality of the FME grown GaxIn1-xAs layers can be achieved. Resonant tunneling diodes (RTD) were fabricated from FME-grown GaxIn1-xAs/AlAs double barrier structures. The best room temperature peak-to-valley ratio of 4.3 demonstrates that this technique provides heterointerfaces of decice quality. Good lateral homogeneity ove the wafer was also achieved.
引用
收藏
页码：126 / 131
页数：6
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