SUBGAP OPTICAL-PROPERTIES OF AMORPHOUS INP PRODUCED BY ION-IMPLANTATION

被引：5
|
作者：
WENDLER, E
MULLER, P
BACHMANN, T
WESCH, W
机构：
[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, D-07743 Jena
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 176卷 / 01期
关键词：
D O I：
10.1016/0022-3093(94)90215-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous InP layers were produced by ion implantation into semi-insulating crystalline InP. The absorption coefficient and the refractive index of this amorphous InP were determined in the frequency range 0.2 eV < ($) over bar h omega < 1.3 eV. The refractive index is increased by 20% with respect to the unimplanted substrate. The sub-gap absorption coefficient yields an optical gap of about 0.65 eV. The comparison of the spectral dependence of the absorption coefficient of ion implanted amorphous InP with that of flash evaporated amorphous InP indicates a higher degree of disorder in the implanted than in the evaporated material.
引用
收藏
页码：85 / 90
页数：6
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