OPTICAL-PROPERTIES OF ION-IMPLANTED SI LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY

被引：13
作者：
ADACHI, S
MATSUMURA, T
SUZUKI, T
机构：
[1] Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期
关键词：
SILICON; ION IMPLANTATION; DAMAGE; AMORPHOUS; ANNEALING; SPECTROSCOPIC ELLIPSOMETRY; DIELECTRIC FUNCTION;
D O I：
10.1143/JJAP.33.1931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The damage produced in crystalline Si by As+ ion implantation at 80 keV has been studied using spectroscopic ellipsometry (SE). A linear regression analysis (LRA) and a Bruggeman effective-medium approximation (EMA) require a multilayer-structure (four-phase) model: ambient (air), first and second damaged Si layers and Si substrate. Each damaged layer consists of volume fractions of crystalline and amorphous Si and voids. The LRA-EMA analysis suggests that the buried fully amorphized layer with a partially amorphized overlayer begins to form around approximately 9 X 10(14) cm-2 dose. Results on the isothermal annealing have also been presented. SE has been proven to be an easy, fast and nondestructive technique which can be used to assess important ion-implantation parameters.
引用
收藏
页码：1931 / 1936
页数：6
相关论文
共 26 条
[1]   OPTICAL DISPERSION-RELATIONS IN AMORPHOUS-SEMICONDUCTORS [J].
ADACHI, S .
PHYSICAL REVIEW B, 1991, 43 (15) :12316-12321
[2]   MODEL DIELECTRIC-CONSTANTS OF SI AND GE [J].
ADACHI, S .
PHYSICAL REVIEW B, 1988, 38 (18) :12966-12976
[3]   OPTICAL-PROPERTIES OF SI PARTIALLY AMORPHIZED BY ION-IMPLANTATION [J].
ADACHI, S ;
AOKI, T .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3313-3319
[4]   CHEMICAL TREATMENT EFFECTS OF SI SURFACES IN NH4OH H2O2 H2O SOLUTIONS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY [J].
ADACHI, S ;
UTANI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A) :L1189-L1191
[5]  
Aspnes D.E, 1985, HDB OPTICAL CONSTANT, V1, P89, DOI 10.1016/B978-0-08-054721-3.50010-1
[6]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[7]  
Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ
[8]  
BAGLEY BG, 1980, B AM PHYS SOC, V25, P12
[9]   DAMAGE ANALYSIS AND OPTICAL-PROPERTIES OF GE-IMPLANTED SILICON [J].
BORGHESI, A ;
PIAGGI, A ;
STELLA, A ;
GUIZZETTI, G ;
BISERO, D ;
QUEIROLO, G .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :7045-7049
[10]   COMPARATIVE-STUDY OF THIN POLY-SI FILMS GROWN BY ION-IMPLANTATION AND ANNEALING WITH SPECTROSCOPIC ELLIPSOMETRY, RAMAN-SPECTROSCOPY, AND ELECTRON-MICROSCOPY [J].
BOULTADAKIS, S ;
LOGOTHETIDIS, S ;
VES, S .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3648-3658
123