A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).
机构:
Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Ohshima, T
Moriguchi, H
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Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Moriguchi, H
Shigemasa, R
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Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Shigemasa, R
Goto, S
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Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Goto, S
Tsunotani, M
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Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Tsunotani, M
Kimura, T
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Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, JapanOki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan
Kimura, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
1999,
38
(2B):
: 1161
-
1163
机构:
Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Hieu, Le Trung
Chiang, Chung-Han
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Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Chiang, Chung-Han
Anandan, Deepak
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Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Anandan, Deepak
Dee, Chang-Fu
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机构:
Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, MalaysiaNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Dee, Chang-Fu
Hamzah, Azrul Azlan
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Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, MalaysiaNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Hamzah, Azrul Azlan
Lee, Ching-Ting
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Yuan Ze Univ, Dept Elect Engn, Taoyuan 320, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Lee, Ching-Ting
Lin, Chung-Hsiung
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Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Lin, Chung-Hsiung
Chang, Edward Yi
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Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Ning, Zhen-Dong
Liu, Shu-Man
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Liu, Shu-Man
Luo, Shuai
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Luo, Shuai
Ren, Fei
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Ren, Fei
Wang, Feng-Jiao
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Wang, Feng-Jiao
Yang, Tao
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Yang, Tao
Liu, Feng-Qi
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Liu, Feng-Qi
Wang, Zhan-Guo
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机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Wang, Zhan-Guo
Zhao, Lian-Cheng
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机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
机构:
Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University
姜腾
任泽阳
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机构:
Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University
任泽阳
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张进成
郝跃
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Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University