ANISOTROPY IN ELECTRICAL PROPERTIES OF [001] SI/[0112] AI2O3

被引:32
作者
HUGHES, AJ [1 ]
THORSEN, AC [1 ]
机构
[1] N AMER ROCKWELL CORP,ANAHEIM,CA 92803
关键词
D O I
10.1063/1.1662554
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2304 / 2310
页数:7
相关论文
共 17 条
[1]  
AUSTERMAN SB, PRIVATE COMMUNICATIO
[2]   The thermal expansion of some refractory oxides [J].
Austin, JB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1931, 14 (11) :795-810
[4]  
HEARMON RFS, 1969, LANDOLT BORNSTEIN NU, V3
[5]  
HUGHES A, UNPUBLISHED
[6]  
MANASEVIT HM, 1966, T METALL SOC AIME, V236, P275
[7]   USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J].
MASON, WP ;
THURSTON, RN .
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) :1096-1101
[8]   TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J].
MORIN, FJ ;
GEBALLE, TH ;
HERRING, C .
PHYSICAL REVIEW, 1957, 105 (02) :525-539
[9]   SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].
PFANN, WG ;
THURSTON, RN .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&
[10]   DEPOSITION OF SILICON ON SINGLE-CRYSTAL SPINEL SUBSTRATES [J].
ROBINSON, PH ;
DUMIN, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :75-&