ON THE ROLE OF SELF-INTERSTITIALS IN IMPURITY DIFFUSION IN SILICON

被引：28
作者：
FAIR, RB
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期
关键词：
D O I：
10.1063/1.327540
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5828 / 5832
页数：5
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