Comparison of SEM-EDS, Micro-XRF and Confocal Micro-XRF for Electric Device Analysis

被引：13

作者：

Komatani, Shintaro ^{[1
,2
]}

Aoyama, Tomoki ^{[3
]}

Nakazawa, Takashi ^{[4
]}

Tsuji, Kouichi ^{[1
]}

机构：

[1] Univ Osaka City, Grad Sch Engn, Dept Appl Chem & Bioengn, Sumiyoshi Ku, Sugimoto 3-3-138, Osaka 5588585, Japan

[2] HORIBA TECHNO Serv CO Ltd, Dept Global Strategy Headquarters, Minami Ku, Kyoto, Kyoto 6018510, Japan

[3] HORIBA Ltd, R&D Ctr, Dept Applicat, Minami Ku, Kyoto, Kyoto 6018510, Japan

[4] Chuo Univ, Fac Sci & Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1128551, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2013年 / 11卷 / 11期

关键词：

X-ray emission; Scanning electron microscopy (SEM); Platinum;

D O I：

10.1380/ejssnt.2013.133

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In general, scanning electron microscope with energy dispersive X-ray spectroscopy (SEM-EDS) has been used in laboratories or factories for the analysis of the element distribution in the samples such as electric components. However, SEM-EDS requires sample preparation, which usually is difficult and takes a long time. On the other hand, micro X-ray fluorescence (mu-XRF) can be utilized for the elemental analysis underneath the surface of the samples thanks to the high penetrating power of X-rays. Furthermore, the depth distribution of elements in the samples can be acquired by the latest confocal XRF. In this paper, the information regarding the depth direction in small electrical and electronic components is compared for SEM-EDS, mu-XRF and the confocal XRF. At the same time, we give a brief report on not only the development of confocal XRF equipment but also some ideas as to the depth profile of the samples.

引用

页码：133 / 137

页数：5