PULSED ELECTRON-BEAM ANNEALING OF SPUTTERED AMORPHOUS SI-H FILMS

被引：1
作者：
TARDY, J
BARBIER, D
CACHARD, A
LAUGIER, A
FONTENILLE, J
机构：
[1] INST NATL SCI APPL,PHYS MAT LAB,F-69100 VILLEURBANNE,FRANCE
[2] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE
来源：
MATERIALS RESEARCH BULLETIN | 1981年 / 16卷 / 03期
关键词：
D O I：
10.1016/0025-5408(81)90052-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：347 / 352
页数：6
相关论文
共 14 条
[1]  
BARBIER D, UNPUBLISHED
[2]   EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J].
BEAN, JC ;
LEAMY, HJ ;
POATE, JM ;
ROZGONYI, GA ;
SHENG, TT ;
WILLIAMS, JS ;
CELLER, GK .
APPLIED PHYSICS LETTERS, 1978, 33 (03) :227-230
[3]  
BEAN JC, 1979, LASER SOLID INTERACT, P487
[4]  
CHU WK, 1978, BACKSCATTERING SPECT, pCH8
[5]  
HOUNOUT D, 1978, PHYS LETT A, V66, P145
[6]  
KENNEDY EF, 1979, LASER SOLID INTERACT, P470
[7]  
LAN SS, 1979, LASER SOLID INTERACT, P503
[8]   NEW UTILIZATION OF B-11 ION-BEAMS - HYDROGEN ANALYSIS BY H-1 (B-11, ALPHA) ALPHA ALPHA NUCLEAR-REACTION [J].
LIGEON, E ;
GUIVARCH, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 22 (02) :101-105
[9]   HYDROGEN IMPLANTATION IN SILICON BETWEEN 1.5 AND 60 KEV [J].
LIGEON, E ;
GUIVARCH, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4) :129-137
[10]  
PEERCY PS, 1980, LASER SOLID INTERACT, P331
12