ON THE ORIGIN OF LOW-FREQUENCY NOISE IN HTCS THIN-FILMS

被引:8
|
作者
JUNG, G
BONALDI, M
VITALE, S
KONOPKA, J
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
[2] CNR,CTR FIS STATI AGGREGATI & IMPIANTO ION,I-38050 TRENT,ITALY
来源
PHYSICA C | 1991年 / 180卷 / 1-4期
关键词
D O I
10.1016/0921-4534(91)90680-W
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pronounced low frequency voltage noise extending into MHz frequencies was observed in current biased granular Y-Ba-Cu-O films. At some particular bias conditions it was possible to isolate the random telegraph voltage noise produced by a single elementary two-level fluctuator. The telegraph signal and the power spectrum of the noise depended strongly on the dc bias current and on the applied magnetic field. On the basis of experimental observations two alternative mechanisms; charge carrier trapping in the barriers of intrinsic Josephson junctions and magnetic flux jumping, auto-detected by intrinsic dc SQUIDS, are proposed as possible sources of the 1/f noise in superconducting high-T(c) films.
引用
收藏
页码:276 / 279
页数:4
相关论文
共 50 条
  • [1] LOW-FREQUENCY VOLTAGE NOISE IN CURRENT BIASED HTCS THIN-FILMS
    GIERLOWSKI, P
    JUNG, G
    KULA, W
    LEWANDOWSKI, SJ
    SAVO, B
    SOBOLEWSKI, R
    TEBANO, A
    VECCHIONE, A
    PHYSICA B, 1994, 194 : 2043 - 2044
  • [2] ELECTROMIGRATION EFFECT ON LOW-FREQUENCY NOISE IN AL THIN-FILMS
    LIOU, DM
    GONG, J
    CHEN, CC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 708 - 710
  • [3] A MODEL FOR LOW-FREQUENCY CAPACITANCE IN CADMIUM TELLURIDE THIN-FILMS
    GOULD, RD
    GRAVANO, S
    ISMAIL, BB
    THIN SOLID FILMS, 1991, 198 (1-2) : 93 - 102
  • [4] EFFECT OF FREQUENCY FROM LOW-FREQUENCY TO MICROWAVE ON THE PLASMA DEPOSITION OF THIN-FILMS
    WERTHEIMER, MR
    MOISAN, M
    KLEMBERGSAPIEHA, JE
    CLAUDE, R
    PURE AND APPLIED CHEMISTRY, 1988, 60 (05) : 815 - 820
  • [5] LOW-FREQUENCY IMPEDANCE AND STRUCTURAL-PROPERTIES OF YBCO THIN-FILMS
    MURRAY, BG
    RAVEN, MS
    INAMETI, EE
    WAN, YM
    VACUUM, 1992, 43 (1-2) : 131 - 134
  • [6] MEASUREMENT OF THE COMPLEX PERMITTIVITY OF THIN-FILMS IN THE VERY LOW-FREQUENCY RANGE
    PISARKIEWICZ, T
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (03): : 225 - 229
  • [7] LOW-FREQUENCY NOISE IN RF-SPUTTERED PB-DOPED 2223 PHASE BISRCACUO THIN-FILMS
    SHIH, I
    LI, AL
    LAM, WW
    QIU, CX
    PHONG, LN
    TREMBLAY, B
    CANADIAN JOURNAL OF PHYSICS, 1994, 72 (5-6) : 270 - 273
  • [8] RANDOM TELEGRAPH SIGNALS AND LOW-FREQUENCY VOLTAGE NOISE IN Y-BA-CU-O THIN-FILMS
    JUNG, G
    VITALE, S
    KONOPKA, J
    BONALDI, M
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5440 - 5449
  • [9] A MODEL FOR ELECTROMIGRATION AND LOW-FREQUENCY NOISE IN THIN METAL-FILMS
    YANG, WY
    CELIKBUTLER, Z
    SOLID-STATE ELECTRONICS, 1991, 34 (08) : 911 - 916
  • [10] Origin of low-frequency noise in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Farmakis, FV
    Kamarinos, G
    Brini, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9919 - 9923