RELAXATION MODEL FOR OSCILLATIONS IN SEMICONDUCTORS WITH DOUBLE-CARRIER INJECTION

被引：4

|

作者：

BRABANT, JC

BROUSSEAU, M

BARRAU, J

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 5卷 / 02期

关键词：

D O I：

10.1002/pssa.2210050221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：471 / +

页数：1

相关论文

共 50 条

[41] RELAXATION OF FAST ELECTRONS IN SEMICONDUCTORS AT COUPLED PLASMON PHONON OSCILLATIONS
KUMEKOV, SE
PEREL, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1291 - 1294
[42] TRANSIENT DOUBLE-INJECTION CURRENTS IN SEMICONDUCTORS
RUDENKO, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 729 - 733
[43] DOUBLE INJECTION CURRENTS IN SEMICONDUCTORS WITH DEEP IMPURITIES
RABINOVICH, FY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1189 - 1190
[44] DOUBLE INJECTION IN SEMICONDUCTORS WITH MULTIVALENT TRAPPING CENTERS
ZWICKER, HR
STREETMAN, BG
HOLONYAK, N
ANDREWS, AM
JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4697 - +
[45] Study of self-erasing of recording process in Zn: Fe: LiNbO3 with the double-carrier four-trap model
Meng, QX
Gong, DW
Zhang, JL
Sun, XD
ACTA PHYSICA SINICA, 2004, 53 (06) : 1788 - 1792
[46] CARRIER RELAXATION PROCESSES IN SEMICONDUCTORS PROBED BY ULTRASHORT OPTICAL PULSES
SHAH, J
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1986, 3 (13): : P86 - P86
[47] CARRIER RELAXATION TIME FROM INFRARED REFLECTION SPECTRA IN SEMICONDUCTORS
NAVASCUE.G
FLORES, F
SOLID STATE COMMUNICATIONS, 1971, 9 (14) : 1267 - &
[48] TEMPERATURE AND CARRIER DENSITY STRATIFICATION IN SEMICONDUCTORS WITH SLOW RELAXATION OF THE PHOTORESPONSE
PIRAGAS, KA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 749 - 752
[49] EFFECT OF AMBIPOLAR DIFFUSION ON THE HOT-CARRIER RELAXATION IN SEMICONDUCTORS
ALGARTE, ACS
PHYSICAL REVIEW B, 1991, 43 (03): : 2408 - 2411
[50] THE ROLE OF COHERENCE FOR CARRIER RELAXATION IN PHOTO-EXCITED SEMICONDUCTORS
KUHN, T
HAAS, S
ROSSI, F
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 188 (01): : 369 - 380

← 1 2 3 4 5 →