SI ETCHING WITH LOW ION ENERGY IN LOW-PRESSURE ELECTRON-CYCLOTRON RESONANCE PLASMA GENERATED BY LONGITUDINAL AND MULTIPOLE MAGNETIC-FIELDS

被引：4

作者：

SHINDO, H

HASHIMOTO, T

HORIIKE, Y

机构：

[1] Hiroshima University, Higashi-Hiroshima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期

关键词：

LOW-ION-ENERGY (15-25 EV) ETCHING; LOW-PRESSURE PLASMA; MULTIPOLAR ECR; SELF-BIAS CONTROL; MIRROR MAGNETIC FIELD;

D O I：

10.1143/JJAP.30.882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si etching at the low pressure of 5 x 10(-5) Torr was studied employing a multipolar electron cyclotron resonance (ECR) plasma stabilized further by longitudinal magnetic field. Even at low pressure, the negative ion generated in the NF3 plasma greatly reduced the self-bias voltage. The self-bias of 25 V provided an anisotropic etching feature in NF3 alone. A further reduction of the bias voltage was made by changing the mirror magnetic field through control of the electron incoming flux, and at the lowest, the voltage of 14 V was attained. In this condition, the etched profile of the side wall became concave. However, the 20% O2 addition to the NF3 achieved the directional feature in the condition.

引用

页码：882 / 885

页数：4