TIME-DEPENDENCE OF ZINC DIFFUSION IN GALLIUM ARSENIDE UNDER A CONCENTRATION GRADIENT

被引：37

作者：

TING, CH

PEARSON, GL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 09期

关键词：

D O I：

10.1149/1.2408353

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1454 / &

相关论文

共 15 条

[1] PRECIPITATES INDUCED IN GAAS BY IN-DIFFUSION OF ZINC
BLACK, JF
JUNGBLUTH, ED
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 181 - +
[2] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE
CASEY, HC
PANISH, MB
CHANG, LL
[J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +
[3] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS
CHANG, LL
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &
[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE
CUNNELL, FA
GOOCH, CH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133
[5] AN ANALYTICAL METHOD OF CALCULATING VARIABLE DIFFUSION COEFFICIENTS
HALL, LD
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (01) : 87 - 89
[6] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163
[7] LANGINI RL, 1962, SOLID STATE ELECTRON, V5, P127
[8] DIFFUSION OF ZINC INTO GAAS
MARUYAMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 476 - &
[9] ARSENIC-RICH REGION OF GA-AS-ZN TERNARY PHASE SYSTEM-MODIFICATION OF TERNARY DIAGRAM
PANISH, MB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 861 - &
[10] DIFFUSION OF ZN IN 3-V SEMICONDUCTING COMPOUNDS
SHAW, D
SHOWAN, SR
[J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : 109 - &