VAPOUR GROWTH OF MULTILAYERED GAAS STRUCTURES FOR SERIES OPERATION OF TRANSFERRED-ELECTRON OSCILLATORS

被引：3

|

作者：

ENSTROM, RE

REYNOLDS, JF

BERSON, BE

机构：

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 26期

关键词：

D O I：

10.1049/el:19690535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：714 / &

相关论文

共 50 条

[41] QUASI-ENHANCEMENT-MODE OPERATION OF TRANSFERRED-ELECTRON LOGIC DEVICES (TELDS)
UPADHYAYULA, LC
ELECTRONICS LETTERS, 1976, 12 (10) : 262 - 263
[42] AN ACCURATE CALCULATION OF THE DC ELECTRICAL AND THERMAL-CHARACTERISTICS OF GAAS TRANSFERRED-ELECTRON DEVICES
BATCHELOR, AR
MILES, RE
HOWES, MJ
SOLID-STATE ELECTRONICS, 1990, 33 (11) : 1485 - 1491
[43] 2ND-HARMONIC LOCKING PROPERTIES OF LSA-MODE TRANSFERRED-ELECTRON OSCILLATORS
LIDGEY, FJ
ALLEN, PJ
ELECTRONICS LETTERS, 1977, 13 (09) : 260 - 261
[44] COMMENTS ON INJECTION PHASE-LOCKING CHARACTERISTICS OF LSA-MODE TRANSFERRED-ELECTRON OSCILLATORS
HINES, ME
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02): : 249 - &
[45] COMMENTS ON INJECTION PHASE-LOCKING CHARACTERISTICS OF LSA-MODE TRANSFERRED-ELECTRON OSCILLATORS
CURTICE, WR
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (01): : 138 - &
[46] BIAS-DEPENDENT OSCILLATIONS IN 10 MU-M-LONG TRANSFERRED-ELECTRON OSCILLATORS
GRUBIN, HL
ELECTRONICS LETTERS, 1974, 10 (18) : 371 - 372
[47] HIGH-POWER L-BAND AND S-BAND TRANSFERRED-ELECTRON OSCILLATORS
BERSON, BE
ENSTROM, RE
REYNOLDS, JF
RCA REVIEW, 1970, 31 (01): : 20 - +
[48] PHOTO-ETCHING OF INP MESAS FOR PRODUCTION OF MM-WAVE TRANSFERRED-ELECTRON OSCILLATORS
LUBZENS, D
ELECTRONICS LETTERS, 1977, 13 (07) : 171 - 172
[49] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES
CONSTANT, E
MIRCEA, A
PRIBETICH, J
FARRAYRE, A
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3934 - 3940
[50] CW PERFORMANCE OF VAPOR-GROWN GAAS TRANSFERRED ELECTRON OSCILLATORS
DILORENZO, JV
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 123 - +

← 1 2 3 4 5 →