EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES

被引：58
作者：
SANDS, T
HARBISON, JP
CHAN, WK
SCHWARZ, SA
CHANG, CC
PALMSTROM, CJ
KERAMIDAS, VG
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期
关键词：
D O I：
10.1063/1.99162
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1216 / 1218
页数：3
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