TRANSFERRED CHARGE IN THE ACTIVE LAYER AND EL DEVICE CHARACTERISTICS OF TFEL CELLS

被引：70

作者：

ONO, YA

KAWAKAMI, H

FUYAMA, M

ONISAWA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期

关键词：

D O I：

10.1143/JJAP.26.1482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1482 / 1492

页数：11

共 11 条

[1] CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[2] MILLER MR, 1982, P SID, V23, P85
[3] MILLER MR, 1982, 1982 SID INT S LOS A, V13, P120
[4] MILLER MR, 1981, 1981 SID INT S LOS A, V12, P26
[5] MORTON DC, 1985, 1985 INT DISPL RES C, P185
[6] CURRENT AND FIELD CHARACTERISTICS AND MEMORY MECHANISM OF TFEL DEVICES
ONNAGAWA, H
SHIBATA, M
MIYASHITA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01): : 12 - 16
[7] MODELING AC THIN-FILM ELECTROLUMINESCENT DEVICES
SMITH, DH
[J]. JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 209 - 235
[8] ELECTRICAL AND OPTICAL CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES AND DEVICE MODELS
SMITH, DH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1850 - 1851
[9] CHOICE OF DIELECTRICS FOR TFEL DISPLAYS
TIKU, SK
SMITH, GC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 105 - 108
[10] MECHANISMS OF THE NEGATIVE-RESISTANCE CHARACTERISTICS IN AC THIN-FILM ELECTROLUMINESCENT DEVICES
YANG, KWC
OWEN, SJT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) : 452 - 459