MEASURING BULK CURRENTS ON SILICON RECTIFIERS AND A NEW METHOD OF ELIMINATING SURFACE EFFECT

被引:9
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BURTSCHE.J
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D O I
10.1016/0038-1101(69)90033-1
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:591 / &
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共 15 条
[1]   UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J].
BATDORF, RL ;
CHYNOWETH, AG ;
DACEY, GC ;
FOY, PW .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1153-1160
[3]  
BIARD IR, 1964, IEEE T ELECTRON DEVI, VED11, P537
[4]  
BURTSCHER J, 1965, THESIS TH WIEN
[5]   MEASUREMENTS OF CHANNEL-CONDUCTIVITY OF SI-RECTIFIERS [J].
DANNHAUSER, F .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :103-+
[6]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[7]  
GREMMELMAIER R, 1962, FESTKORPERPROBLEME, V1, P20
[8]   SEMICONDUCTOR PROPERTIES OF RECRYSTALLIZED SILICON IN ALUMINUM ALLOY JUNCTION DIODES [J].
GUDMUNDSEN, RA ;
MASERJIAN, J .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1308-1316
[9]   FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES [J].
HERLET, A .
SOLID-STATE ELECTRONICS, 1968, 11 (08) :717-&
[10]   ANOMALE FLUBCHARAKTERISTIKEN VON RHO-NU-UBERGANGEN IN SILIZIUM [J].
QUEISSER, HJ .
ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :313-+