GAAS ALGAAS RIDGE WAVE-GUIDE LASER MONOLITHICALLY INTEGRATED WITH A PHOTODETECTOR USING ION-BEAM ETCHING

被引：12
作者：
BOUADMA, N
GROSMAIRE, S
BRILLOUET, F
机构：
[1] CNET, Bagneux, Fr, CNET, Bagneux, Fr
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 16期
关键词：
D O I：
10.1049/el:19870605
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
9
引用
收藏
页码：855 / 857
页数：3
相关论文
共 9 条
[1]   LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J].
BOUADMA, N ;
RIOU, J ;
KAMPFER, A .
ELECTRONICS LETTERS, 1985, 21 (13) :566-568
[2]  
BOUADMA N, 1987, IEEE J QUANTUM ELECT, V20
[3]  
BOUADMA N, 1987, MAR SEM INT OPT C SI
[4]   GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].
COLDREN, LA ;
IGA, K ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683
[5]   1.3-MU-M INP/INGAASP CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE LASER MONOLITHICALLY INTEGRATED WITH A PHOTODETECTOR [J].
KOSZI, LA ;
CHIN, AK ;
SEGNER, BP ;
SHEN, TM ;
DUTTA, NK .
ELECTRONICS LETTERS, 1985, 21 (25-2) :1209-1210
[6]   INTEGRATED GAAS-ALXGA1-XAS INJECTION-LASERS AND DETECTORS WITH ETCHED REFLECTORS [J].
MERZ, JL ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1977, 30 (10) :530-533
[7]   DISTRIBUTED FEEDBACK LASER DIODE (DFB-LD) TO SINGLE-MODE FIBER COUPLING MODULE WITH OPTICAL ISOLATOR FOR HIGH BIT RATE MODULATION [J].
SUGIE, T ;
SARUWATARI, M .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (02) :236-245
[8]   INTEGRATED ALGAAS 2-BEAM LD-PD ARRAY FABRICATED BY REACTIVE ION-BEAM ETCHING [J].
UCHIDA, M ;
MATSUMOTO, S ;
ASAKAWA, K ;
KAWANO, H .
ELECTRONICS LETTERS, 1986, 22 (11) :585-587
[9]   ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE [J].
WADA, O ;
YAMAKOSHI, S ;
FUJII, T ;
HIYAMIZU, S ;
SAKURAI, T .
ELECTRONICS LETTERS, 1982, 18 (05) :189-190
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