THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING

被引：23

作者：

KANEDA, S

SAKAMOTO, Y

NISHI, C

KANAYA, M

HANNAI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1307 / 1311

页数：5

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