VERY-HIGH-PURITY INP LPE LAYERS

被引：21
作者：
IP, KT
EASTMAN, LF
WRICK, VL
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
来源：
ELECTRONICS LETTERS | 1977年 / 13卷 / 22期
关键词：
D O I：
10.1049/el:19770483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：682 / 683
页数：2
相关论文
共 6 条
  • [1] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
    BAUMANN, GG
    BENZ, KW
    PILKUHN, MH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1232 - 1235
  • [2] HICKS HGB, 1970, 3RD P INT S GAAS REL, P92
  • [3] PURITY OF GAAS GROWN BY LPE IN A GRAPHITE BOAT
    MORKOC, H
    EASTMAN, LF
    [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) : 109 - 114
  • [4] Wood Cohn, COMMUNICATION
  • [5] INSITU IN ETCHING TECHNIQUE FOR LPE INP
    WRICK, V
    SCILLA, GJ
    EASTMAN, LF
    HENRY, RL
    SWIGGARD, EM
    [J]. ELECTRONICS LETTERS, 1976, 12 (16) : 394 - 395
  • [6] WRICK VL, 1976, 6TH P INT S GALL ARS, P35
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