VERY-HIGH-PURITY INP LPE LAYERS

被引：21
作者：
IP, KT
EASTMAN, LF
WRICK, VL
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
来源：
ELECTRONICS LETTERS | 1977年 / 13卷 / 22期
关键词：
D O I：
10.1049/el:19770483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：682 / 683
页数：2
相关论文
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[2]  
HICKS HGB, 1970, 3RD P INT S GAAS REL, P92
[3]   PURITY OF GAAS GROWN BY LPE IN A GRAPHITE BOAT [J].
MORKOC, H ;
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[4]  
Wood Cohn, COMMUNICATION
[5]   INSITU IN ETCHING TECHNIQUE FOR LPE INP [J].
WRICK, V ;
SCILLA, GJ ;
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ELECTRONICS LETTERS, 1976, 12 (16) :394-395
[6]  
WRICK VL, 1976, 6TH P INT S GALL ARS, P35
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