OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS ARSENIC

被引:18
作者
KNIGHTS, JC
MAHAN, JE
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[2] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
关键词
D O I
10.1016/0038-1098(77)90905-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:983 / 986
页数:4
相关论文
共 11 条
[1]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[2]   OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN AMORPHOUS ARSENIC [J].
BISHOP, SG ;
STROM, U ;
TAYLOR, PC .
SOLID STATE COMMUNICATIONS, 1976, 18 (05) :573-576
[3]  
BRODSKY MH, 1972, RC3898 IBM RES REPTS
[4]  
DAVIS EA, 1976, 6TH P INT C AM SEM, P212
[5]   LOCALIZED STATES IN AMORPHOUS ARSENIC [J].
KNIGHTS, J .
SOLID STATE COMMUNICATIONS, 1975, 16 (05) :515-519
[6]   SUBSTITUTIONAL DOPING IN AMORPHOUS-SEMICONDUCTORS AS-SI SYSTEM [J].
KNIGHTS, JC .
PHILOSOPHICAL MAGAZINE, 1976, 34 (04) :663-667
[7]  
KNIGHTS JC, 1976, STRUCTURE EXCITATION, P296
[8]  
MAHAN JE, 1976, THESIS STANFORD U
[9]  
Spear W.E., 1972, J NONCRYST SOLIDS, V11, P219
[10]  
SPEAR WE, 1975, SOLID STATE COMMUN, V17, P9