3-DIMENSIONAL IMPLEMENTATION OF A UNIFIED TRANSPORT MODEL

被引：1

作者：

PIERANTONI, A ^{[1
]}

LIUZZO, A ^{[1
]}

CIAMPOLINI, P ^{[1
]}

BACCARANI, G ^{[1
]}

机构：

[1] UNIV PERUGIA,IST ELETTRON,I-06131 PERUGIA,ITALY

来源：

MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 2-3期

关键词：

D O I：

10.1016/0026-2692(95)98931-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the implementation of a unified transport model within a general-purpose, 3D device simulator. Such a model allows non-isothermal and non-stationary conditions to be accounted for. The model derivation is outlined, and some detail is given concerning the dependence of main parameters on the carrier and the lattice temperature. The three-dimensional discretization is also discussed, focusing on some issues of computational efficiency. Simulations of both a simple MOSFET and a BJT are illustrated, in order to compare performance predictions of the present model with those of more conventional ones.

引用

页码：287 / 300

页数：14

共 25 条

[21]

SELBERHEER S, 1984, SOLID STATE ELECTRON, V27, P394

[22] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].