3-DIMENSIONAL IMPLEMENTATION OF A UNIFIED TRANSPORT MODEL

This paper describes the implementation of a unified transport model within a general-purpose, 3D device simulator. Such a model allows non-isothermal and non-stationary conditions to be accounted for. The model derivation is outlined, and some detail is given concerning the dependence of main parameters on the carrier and the lattice temperature. The three-dimensional discretization is also discussed, focusing on some issues of computational efficiency. Simulations of both a simple MOSFET and a BJT are illustrated, in order to compare performance predictions of the present model with those of more conventional ones.