PLASMA IMMERSION ION-IMPLANTATION FOR SEMICONDUCTOR THIN-FILM GROWTH

被引：9
|
作者：
TUSZEWSKI, M
SCHEUER, JT
CAMPBELL, IH
LAURICH, BK
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new experiment has been constructed to explore the potential of the plasma immersion ion implantation technique for thin film growth on semiconductor substrates. The experiment consists of an inductive plasma source, an ultrahigh vacuum vessel, and a 10 kV pulse generator. The first nitrogen and oxygen plasma results obtained with the inductive source are presented and analyzed.
引用
收藏
页码：973 / 976
页数：4
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