DIRECT OBSERVATION OF EXCITON LOCALIZATION IN A GAAS/ALGAAS QUANTUM-WELL

被引：12

作者：

TAKAHASHI, Y

KANO, SS

MURAKI, K

FUKATSU, S

SHIRAKI, Y

ITO, R

机构：

[1] IBM CORP, CORP RES, TOKYO RES LAB, YAMATO, KANAGAWA 242, JAPAN

[2] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN

[3] UNIV TOKYO, DEPT APPL PHYS, TOKYO 113, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the direct observation of exciton localization in a GaAs/AlGaAs quantum well. We have observed the two-component exponential decay of photoluminescence from heavy-hole excitons when the excitation density is very low. We have confirmed by measuring the lateral spatial motion of excitons that the fast component is attributable to the radiative recombination of free excitons while the slowly decaying component is due to the localized excitons.

引用

收藏

页码：1845 / 1847

页数：3

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