CHARACTERIZATION OF THE HOMOGENEITY OF SEMIINSULATING INP BY THE SPATIALLY-RESOLVED PHOTOCURRENT

被引：6

作者：

MARTIN, P ^{[1
]}

JIMENEZ, J ^{[1
]}

GONZALEZ, MA ^{[1
]}

SANZ, LF ^{[1
]}

CHAFAI, M ^{[1
]}

AVELLA, M ^{[1
]}

机构：

[1] FAC CIENCIAS,E-47011 VALLADOLID,SPAIN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 20卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(93)90407-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semi-insulating Fe-doped InP wafers have been studied by a spatially resolved photocurrent technique. The photocurrent fluctuations are interpreted on the basis of either N(D) - N(A) or [Fe+3] variations, resulting in non-homogeneous electric local compensation, owing to local variations in either the total electrically active Fe concentration or the net donor concentration. Growth striations are revealed, showing differences in the local photocurrent fluctuation at different parts of the wafers, these being barely observable in the wafer edge.

引用

页码：105 / 108

页数：4

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