SELECTIVE EXCITON FORMATION IN THIN GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：54
作者：
BLOM, PWM [1 ]
VANHALL, PJ [1 ]
SMIT, C [1 ]
CUYPERS, JP [1 ]
WOLTER, JH [1 ]
机构：
[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.71.3878
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate experimentally that the exciton luminescence rise times in GaAs/AlxGa1-xAs quantum wells oscillate as a function of laser excess energy. We interpret these results as the occurrence of a selective optical-phonon assisted exciton formation. Experiments on doped quantum wells confirm our exciton formation model.
引用
收藏
页码：3878 / 3881
页数：4
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