SURFACE ELECTRONIC-STRUCTURE OF INAS(110)

被引：17
作者：
ANDERSSON, CBM
ANDERSEN, JN
PERSSON, PES
KARLSSON, UO
机构：
[1] UNIV LUND,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN
[2] LINKOPING UNIV,NATL SUPERCOMP CTR,S-58183 LINKOPING,SWEDEN
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.47.2427
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.
引用
收藏
页码：2427 / 2430
页数：4
相关论文
共 12 条
[1]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[2]   SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB [J].
BERES, RP ;
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 26 (10) :5702-5705
[3]  
EBERHARDT W, 1980, PHYS REV B, V21, P5572, DOI 10.1103/PhysRevB.21.5572
[4]   AN OPTIMIZED BEAM LINE AND EXPERIMENTAL STATION FOR ANGLE RESOLVED PHOTOEMISSION BETWEEN 5 EV LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 50 EV [J].
FELDMANN, CA ;
ENGELHARDT, R ;
PERMIEN, T ;
KOCH, EE ;
SAILE, V .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3) :785-789
[5]  
HANSSON GV, 1988, SURF SCI REP, V9, P1
[6]   EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].
HEDIN, L ;
LUNDQVIS.BI .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&
[7]   FINAL-STATE SYMMETRY AND POLARIZATION EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY [J].
HERMANSON, J .
SOLID STATE COMMUNICATIONS, 1977, 22 (01) :9-11
[8]   ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].
HUIJSER, A ;
VANLAAR, J ;
VANROOY, TL .
PHYSICS LETTERS A, 1978, 65 (04) :337-339
[9]   SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
PHYSICAL REVIEW B, 1985, 31 (04) :2213-2229
[10]  
PERSSON PES, 1986, THESIS LINKOPING I T
12