TRANSIENT HIGH-DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS

被引：5
|
作者：
ANCKERJOHNSON, B
ROBBINS, WP
CHANG, DB
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 10期
关键词：
D O I：
10.1063/1.1653032
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：377 / +
页数：1
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