MECHANISM OF A REDUCTION OF DISLOCATION DENSITIES IN VERTICAL-GRADIENT-FREEZE-GROWN GAAS SINGLE-CRYSTALS

被引：2

作者：

OKADA, Y

SAKURAGI, S

HASHIMOTO, S

机构：

[1] UNION MAT INC, TONE, IBARAKI 27012, JAPAN

[2] KYOTO UNIV, FUSHIMI KU, KYOTO 612, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Dislocation; Gaas; Loop dislocation; Vgf; X-ray topographs;

D O I：

10.1143/JJAP.29.L1954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In gallium arsenide single crystal grown by using a sealed ampoule procedure based on the vertical gradient freeze method, dislocation elimination with an increasing fraction of melt solidified was observed by chemical etching and X-ray topography. It is found that the dislocation density is as low as 103cm-2in the tail end of the 60-mm-long ingot. The mechanism of the reduction of dislocation densities is discussed in terms of the loop formation. © 1990 IOP Publishing Ltd.

引用

页码：L1954 / L1956

页数：3

共 11 条

[1]

BERZ KW, 1979, J CRYST GROWTH, V46, P35

[2] ELIMINATION OF DISLOCATIONS IN BULK GAAS CRYSTALS GROWN BY LIQUID-PHASE ELECTROEPITAXY [J].